Alexander ShlugerPrincipal Investigator, Ph.D.
| Job | Principal Investigator, AIMR Professor (Department of Physic and Astronomy and London Centre for Nanotechonology, UCL) |
|---|---|
| Group | Material Physics Group |
| Laboratory | A.Shluger Laboratory |
| Address | Department of Physics and Astronomy & LCN London Thomas Young Centre University College London Gower Street, London WC1E 6BT, UK |
| Tel | +44-207-679-1312 (UK) |
| a.shluger@ucl.ac.uk | |
| Related Site |
Research Interests
Theoretical modeling of:- Defects and defect properties in insulators metal/insulator and semiconductor/insulator interfaces
- Atomic Force Microscopy imaging and molecular manipulation
- Photo-induced surface processes
Main Publication List
- A. Padovani, P. La Torraca, J. Strand, L. Larcher, A. Shluger, Dielectric breakdown of oxide films in electronic devices, - Nature Reviews Materials, 9, 607-627 (2024)
- J. W. Strand, P. La Torraca, A. Padovani, L. Larcher and A. L. Shluger, Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation, - J. Appl. Phys. 131, 234501 (2022)
- J. W. Strand, J. Cottom, L. Larcher, A. L Shluger, Effect of electric field on defect generation and migration in HfO2, - Phys. Rev. B 102, 014106 (2020)
- J. Strand, M. Kaviani, D. Gao, Al-M. El-Sayed, V. V Afanas’ev, A. L. Shluger, Intrinsic charge trapping in amorphous oxide films: status and challenges, - J. Phys.: Condens. Matter, 30, 233001 (2018)
- A. Padovani, D. Z. Gao, A. L. Shluger, L. Larcher, A microscopic mechanism of dielectric breakdown in SiO2 films: An insight from multi-scale modelling, J. Appl. Phys. 121, 155101 (2017)
- Mehonic, M. Buckwell, L. Montesi, M. Singh Munde, D. Gao, S. Hudziak, R. J. Chater, S. Fearn, D. McPhail, M. Bosman, A. L. Shluger, A. J. Kenyon, Nanoscale Transformations in Metastable, Amorphous, Silicon‐Rich Silica, Adv. Materials 28, 7486-7493 (2016)
- Y. Wimmer, Al-M. El-Sayed, W. Gös, T. Grasser, A. L. Shluger, Role of hydrogen in volatile behaviour of defects in SiO2-based electronic devices, - Proc. Royal Soc. A, 472, 20160009 (2016)
- A.-M. El-Sayed, M. B. Watkins, T. Grasser, V. V. Afanas'ev, and A. L. Shluger, Hydrogen-Induced Rupture of Strained Si-O Bonds in Amorphous Silicon Dioxide, - Phys. Rev. Lett. 114, 115503 (2015)
- K. Hayashi, P. V Sushko, Y. Hashimoto, A. L Shluger, Hideo Hosono, Hydride ions in oxide hosts hidden by hydroxide ions, - Nature Communications 5, 3551 (2014)
- Al-M. El-Sayed, M. B Watkins, V. V. Afanas' ev, and A. L. Shluger, Nature of intrinsic and extrinsic electron trapping in SiO2, - Phys. Rev. B 89, 125201 (2014)
Award
- David Tabor Medal and Prize of the Institute of Physics, UK for development of new theoretical models of defects at the surfaces and interfaces of insulators and mechanisms of imaging and manipulation of surface atoms and molecules using atomic force microscopy (AFM). (2020)
- Daiwa Adrian Prize of the Daiwa Anglo-Japanese Foundation for Exploration of Active Functionality in Abundant Oxide Materials Utilizing Unique Nanostructure. (2013)
- Fellow of the American Physical Society (2011)
- Fellow of the Institute of Physics (1996)
Related Information
- 07/25/2016 In the Spotlight Raising awareness in Europe
- 08/25/2014 Research Highlights Ionic liquids: Going with the flow
- 01/27/2014 In the Spotlight Strengthening scientific exchange and joint research
- 06/25/2012 Research Highlights Oxide materials: Hidden layers
- 02/27/2012 Research Highlights Structural defects: Know the boundaries
- 11/29/2010 Research Highlights Single-molecule imaging: Finished in chrome