 UHV-sputtering system(Three chambers and 19 cathodes) |
 UHV-sputtering system(8 cathodes) |
 UHV-sputtering system(3 cathodes) |
 UHV-PVD system (3 cathodes and 1 EB gun) |
 UHV-PVD system (3 cathodes and 2 organic cells) |
|
 Furnace (Max. 1250C) |
 熱処理炉東栄 |
 熱処理炉テック |
Characterizations（AIMR ANNEX ＆Integration Lab.Bldg.）
 Dektak |
 X-ray diffractometer for thinfilm (Common equipment) |
 AFM |
|---|---|---|
 VSM（Rt,2T） |
 CIPT（i-plane field) |
 Polar micro-MOKE(RT,2.5 T) |
 Wire Bonding |
 Magneto-trasnport measurement (5-300K, 2 T) |
 PPMS |
 DC&RF probing system(RT, out-of-plane, 2.7T)(RT, in-plane, 0.3T) |
VNA ferromagnetic resonance(2-20 GHz) |  Time-resolved MOKE (TRMOKE) systemwith Femtosecond Laser(RT, 2.0T) |
 THz emmisio n 2 T in-plane field |
 Space-time resolved TRMOE microscopy |
 trmoke 2T variable field |
 Mask alignner |
 Ion beam etching |
 Sputtering system |
 EB lithography(Common equipment) |
 FE-SEM(Common equipment) |