 UHV-sputtering system (Three chambers and 19 cathodes) |
 UHV-sputtering system(8 cathodes) |
 UHV-sputtering system(3 cathodes) |
|---|---|---|
１ UHV-PVD system(3 cathodes and 1 EB gun) |
 UHV-PVD system(3 cathodes and 2 organic cells) |
|
 Furnace(Max. 1250C) |
 熱処理炉東栄 |
 熱処理炉テック |
Characterizations (AIMR ANNEX & Integration lab. Bldg.)
 Dektak |
１ X-ray diffractometerfor thin film (Common equipment) |
 AFM |
|---|---|---|
 VSM (RT, 2T) |
 CIPT（i-plane field) |
 Polar micro-MOKE (RT, 2.5 T) |
 Wire Bonding |
 Magneto-trasnport measurement(5-300K, 2 T) |
 PPMS |
 DC&RF probing system(RT, out-of-plane, 2.7T) (RT, in-plane, 0.3T) |
VNA ferromagnetic resonance(2-20 GHz) |  Time-resolved MOKE (TRMOKE) systemwith Femtosecond Laser (RT, 2.0T) |
 THz emmisio n 2 T in-plane field |
 Space-time resolved TRMOE microscopy |
 trmoke 2T variable field |
 Mask alignner |
 Ion beam etching |
 Sputtering system |
|---|---|---|
 EB lithography(Common equipment) |
 FE-SEM(Common equipment) |