Hideo Ohno Principal Investigator, Ph.D.

Job Professor
Director ( Center for Spintronics Integrated System, Tohoku University)
Director ( Laboratory of Nanoelectronics and Spintronics,
Research Institute of Electrical Communication, Tohoku University)
Group Device/System Group
Laboratory H.Ohno Laboratory
Address Room A301, Laboratory of Nanoelectronics and Spintronics,
Research Institute of Electrical Communication, Katahira Campus
(2-1-1, Katahira, Aoba-ku, Sendai, 980-8577)
Tel 022-217-5553
E-Mail ohno@riec.tohoku.ac.jp
Related Site

Research Interests

  • Spintronics
  • Nanoelectronics
  • Semiconductor Science and Technology

Main Publication List

  • S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura, and H. Ohno, "Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction", Applied Physics Letters, vol. 101, pp. 122403 (1)-122403(3), September 2012
  • S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, and H. Ohno, "A perpendicular-anisotropy CoFeB?MgO magnetic tunnel junction," Nature Materials, vol. 9, pp. 721-724, August 2010
  • M. Yamanouchi, D. Chiba, F. Matsukura, and H. Ohno, "Current-induced domain-wall switching in a ferromagnetic semiconductor structure," Nature, vol. 428, pp. 539 - 542, 1 April 2004
  • H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, and K. Ohtani, "Electric-field control of ferromagnetism," Nature, vol. 408, pp. 944-946, 2000
  • H. Ohno, "Making nonmagnetic semiconductors ferromagnetic," Science, vol. 281, pp. 951-956, 1998

Award

  • IBM Japan Science Award (1998)
  • Japan Academy Prize (2005)
  • Thomson Reuters Citation Laureate (2011)
  • JSAP Outstanding Achievement Award (2012)
  • IEEE David Sarnoff Award (2012)