Fumihiro Matsukura h.D.

Job Professor
Group Materials Physics Group
Laboratory H.Ohno Laboratory
Address room 317, AIMR annex building, Katahira Campus
(2-1-1, Katahira, Aoba-ku ,Sendai 980-8577)

room A303, Laboratory for Nanoelectronics and Spintronics, RIEC, Katahira Campus
(2-1-1, Katahira, Aoba-ku, Sendai 980-8577)
Tel 022-217-5949
022-217-5554
E-Mail f-matsu@wpi-aimr.tohoku.ac.jp
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Research Interests

  • Physics and Application of Ferromagnetic Semiconductors (1994-)

Main Publication List

  • F. Matsukura, H. Ohno, A. Shen, and Y. Sugawara, "Transport properties and origin of ferromagnetism in (Ga,Mn)As," Phys. Rev. B 57, R2037 (1998).
  • T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, "Zener model description of ferromagnetism in zinc-blende magnetic semiconductors," Science 287, 1019 (2000).
  • H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, and K. Ohtani, "Electric-field control of ferromagnetism," Nature 408, 944 (2000).
  • F. Matsukura, M. Sawicki, T. Dietl, D. Chiba, and H. Ohno, "Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain," Physica E 21, 1032 (2004).
  • D. Chiba, M. Sawicki, Y. Nishitani, F. Matsukura, and H. Ohno, "Magnetization vector manipulation by electric fields," Nature 455, 515 (2008).